Semiconductor device and method for manufacturing semiconductor device

ABSTRACT

A p anode layer is formed on one main surface of an n− drift layer. N+ cathode layer having an impurity concentration more than that of the n− drift layer is formed on the other main surface. An anode electrode is formed on the surface of the p anode layer. A cathode electrode is formed on the surface of the n+ cathode layer. N-type broad buffer region having a net doping concentration more than the bulk impurity concentration of a wafer and less than the n+ cathode layer and p anode layer is formed in the n− drift layer. Resistivity ρ0 of the n− drift layer satisfies 0.12V0≤ρ0≤0.25V0 with respect to rated voltage V0. Total amount of net doping concentration of the broad buffer region is equal to or more than 4.8×1011 atoms/cm2 and equal to or less than 1.0×1012 atoms/cm2.

TECHNICAL FIELD

The present invention relates to a semiconductor device, such as a diodeor an Insulated Gate Bipolar Transistor (IGBT), which operates at a highspeed and has low loss and soft recovery characteristics, and a methodfor manufacturing a semiconductor device.

BACKGROUND ART

Power semiconductor devices are used in power converting devices, suchas converters and inverters with high efficiency and low powerconsumption, and are indispensable for controls of rotary motors orservo motors. The power control device requires the characteristics oflow loss, low power consumption, a high-speed operation, highefficiency, and no environmental problem, that is, no adverse influenceon the surroundings. In order to meet the demand for a power controldevice with low loss and high efficiency, a diode with a broad bufferstructure has been proposed as an improved type of the diode used in thepower control device. The broad buffer structure means a structure inwhich the impurity concentration distribution of an n⁻ drift layer has apeak (local maximum value) in the vicinity of a center portion of the n⁻drift layer and which has a broad buffer region including a region inwhich the impurity concentration distribution is inclined so as to bereduced toward an anode and a cathode.

The diode with the broad buffer structure allows a reduction in theemitter injection efficiency of the related art and realization of softrecovery characteristics and an oscillation prevention effect in ahigh-speed operation (for example, carrier frequency: 5 kHz or more)which has been difficult to be achieved in the lifetime distributioncontrol technique.

A method using a hydrogen-induced donor has been proposed as a method ofmanufacturing the diode with the broad buffer structure. In the method,an floating zone (FZ) bulk wafer is irradiated with protons (hydrogenions, H⁺) such that the protons H⁺ reach the depth of the n⁻ drift layerwhich has been hardly achieved by a general n-type doping element(phosphorus or arsenic) ion injection method, thereby forming a latticedefect, and a heat treatment is then performed. In the method, theirradiation with the protons and the heat treatment cause a donor (forexample, called a hydrogen-induced donor or a hydrogen-associated donor)to be formed in the vicinity of the range Rp of the proton H⁺ in thewafer by a defect complex including the proton H⁺ (for example, see thefollowing Patent Literature 1 (Paragraphs 0020 and 0021) and thefollowing Patent Literature 2 (Abstract)). In addition, a method hasbeen proposed in which oxygen is introduced into a wafer and is combinedwith the hydrogen-induced donor, thereby forming a high-concentrationbroad buffer region (for example, see the following Patent Literature 3(Paragraph 0011)).

In general, a silicon (Si) power semiconductor, an FZ wafer which ischeaper than an epitaxial wafer is used to manufacture an IGBT or adiode from an economic viewpoint. In addition, it is known that a methodwhich irradiates a silicon wafer with neutron beams to convert siliconinto phosphorus (P), which is a stable isotope, using nucleartransmutation, thereby forming phosphorus, which is an impurity, in awafer (hereinafter, referred to as a neutron irradiation wafer) iseffective in uniformly distributing impurities in the wafer. Theresistivity variation of the neutron irradiation wafer, for example, a6-inch wafer is about ±8%.

As a method of forming the neutron irradiation wafer, a method has beenproposed which changes protons H⁺ into donors using irradiation with theprotons H⁺ and a heat treatment and injects donors with a concentrationmore than that of the wafer before neutron irradiation into the n baseregion (n⁻ drift layer) (for example, see the following PatentLiterature 4).

CITATION LIST Patent Literature

Patent Literature 1: Japanese Patent Application Laid-Open (JP-A) No.2003-318412

Patent Literature 2: International Publication Pamphlet No.WO2007/055352

Patent Literature 3: JP-A No. 2007-266233

Patent Literature 4: JP-A No. 2008-91853

DISCLOSURE OF INVENTION Problem to be Solved by the Invention

However, in the FZ wafer according to the related art into which animpurity element mixed with a raw material gas is introduced (gas-doped)by ion injection or thermal diffusion, a resistivity variation is morethan that of the neutron irradiation wafer and is about ±12% in a 6-inchwafer. The large resistivity variation directly affects a breakdownvoltage variation. Therefore, it is necessary to newly examine areduction in the breakdown voltage variation. In the case of asemiconductor device with a non-punch through structure, the breakdownvoltage V_(B) (V) of the semiconductor device can be represented by thefollowing Expression 1.

V _(B) =W ²/(0.29ρ₀)  [Expression 1]

In Expression 1, W is the width (μm) of a depletion layer and ρ₀ is theresistivity (bulk resistivity) of a silicon wafer. In theabove-mentioned Expression 1, for example, in the semiconductor devicewith the non-punch through structure which is manufactured using thegas-doped FZ wafer, when a variation in the resistivity ρ₀ is ±12%, avariation in the breakdown voltage V_(B) is also 12%. In addition to thebreakdown voltage, a variation in the switching characteristics is also12%. When the variation in the switching characteristics is 12% or more,a problem is likely to occur in warranty on the operation of the device.One of the methods of reducing the variation in the switchingcharacteristics to 12% or less is to reduce the resistivity variation tobe less than ±12%. For example, as described above, in order to reducethe resistivity variation, it is effective to use the neutronirradiation wafer whose resistivity is controlled by neutron irradiationwhich reduces the resistivity variation to be less than ±12%.

However, when the bulk resistivity is adjusted by neutron irradiation,an atomic furnace is needed and a huge cost is required to build andmaintain the atomic furnace. Therefore, it is not economically practicalfor one semiconductor manufacturing company to possess the atomicfurnace. It is necessary to request an external institution having theatomic furnace to adjust the bulk resistivity. However, there are fewexternal institutions including foreign institutions. There is anincreasing demand for in-vehicle or industrial power semiconductors andit is difficult for only the external institutions to process the powersemiconductors. In addition, the processing cost is high. Therefore, itis desirable to find a method capable of reliably reducing or solvingthe variation in the breakdown voltage of the semiconductor device orthe variation in the switching characteristics at a low cost, as amethod other than the method using the neutron irradiation.

When the semiconductor device is manufactured using the gas-doped FZwafer, without using the neutron irradiation wafer, a variation in theresistivity of the wafer increases as the diameter of the wafer becomesmore than 6 inches. Therefore, it is technically difficult to reduce theresistivity variation to be less than ±12%. In addition, when aCzochralski (CZ) wafer is used to manufacture a semiconductor device, itis difficult to manufacture an n-type wafer which is originally uniformand has high resistivity. Therefore, it is difficult to reduce theresistivity variation to be less than ±12% using the CZ wafer.Therefore, it is desirable to provide a semiconductor device with a newdevice structure which has a small effect on the breakdown voltagevariation even when the resistivity variation of the FZ wafer is equalto or more than ±12% as described above and a method of manufacturingthe semiconductor device.

As a method of removing the breakdown voltage variation, PatentLiterature 3 discloses a method which introduces protons using ionimplantation and performs a heat treatment at 500° C. so that theprotons diffuse into the entire n⁻ drift layer, thereby controlling theimpurity concentration of the n⁻ drift layer. However, in practice,since data indicating that the hydrogen-associated donor is removed at atemperature of 550° C. or more has been obtained, it is difficult tocontrol impurity concentration in a wide range, such as the entire n⁻drift layer. In particular, it is very difficult to control the impurityconcentration of a low-concentration n⁻ drift layer required for asemiconductor device with a high breakdown voltage. Therefore, when thesemiconductor device with a high breakdown voltage is manufactured, itis difficult to obtain the effect of reducing a variation in thebreakdown voltage even when the technique disclosed in Patent Literature3 is applied.

The invention has been made in order to solve the above-mentionedproblems, and an object of the invention is to provide a semiconductordevice capable of reducing a variation in a breakdown voltage and avariation in switching characteristics and a method of manufacturing asemiconductor device. In addition, an object of the invention is toprovide a semiconductor device capable of reducing manufacturing costsand a method of manufacturing a semiconductor device.

Means for Solving Problem

In order to solve the above-mentioned problems and achieve the objectsof the invention, according to an aspect of the invention, there isprovided a semiconductor device including: a firstfirst-conductivity-type semiconductor layer; a secondsecond-conductivity-type semiconductor layer that is provided on onemain surface of the first semiconductor layer and has an impurityconcentration more than that of the first semiconductor layer; a thirdfirst-conductivity-type semiconductor layer that is provided on theother main surface of the first semiconductor layer and has an impurityconcentration more than that of the first semiconductor layer; and afirst-conductivity-type broad buffer region which is provided in thefirst semiconductor layer and has an impurity concentration more thanthat of the first semiconductor layer and in which a local maximum valueof an impurity concentration distribution is less than the impurityconcentration of the second semiconductor layer and the thirdsemiconductor layer. The total amount of the net doping concentration ofthe broad buffer region is equal to or more than 4.8×10¹¹ atoms/cm² andequal to or less than 1.0×10¹² atoms/cm². The resistivity ρ₀ (Ωcm) ofthe first semiconductor satisfies 0.12V₀≤ρ₀≤0.25V₀ with respect to arated voltage V₀ (V).

The total amount of the net doping concentration of the broad bufferregion may be equal to or more than 5.2×10¹¹ atoms/cm² and equal to orless than 1.0×10¹² atoms/cm², and the resistivity ρ₀ of the firstsemiconductor layer may satisfy 0.133V₀≤ρ₀≤0.25V₀ with respect to therated voltage V₀ (V).

A plurality of broad buffer regions may be provided in the firstsemiconductor layer.

A ratio γ of the sum of the widths of the plurality of broad bufferregions to the width of the first semiconductor layer, a ratio η of thesum of reductions in the electric field intensities of the plurality ofbroad buffer regions to a critical electric field intensity when anreverse-bias voltage with the same level as a breakdown voltage isapplied, and a deviation ratio α of a measured value to a standard valueof the donor concentration of a substrate which will be the firstsemiconductor layer may satisfy 4α(γ/η)/{(2−α) (2+α)}<α.

The first semiconductor layer may be an FZ silicon substrate.

In order to solve the above-mentioned problems and achieve the objectsof the invention, according to another aspect of the invention, there isprovided a semiconductor device including: a first-conductivity-typedrift layer; a second-conductivity-type base layer that is provided on afirst main surface of the drift layer and has an impurity concentrationmore than that of the drift layer; a first-conductivity-type emitterlayer that is provided on the first main surface of the drift layer soas to come into contact with the base layer and has an impurityconcentration more than that of the base layer; an insulating film thatcomes into contact with the drift layer, the base layer, and the emitterlayer; a gate electrode that is adjacent to the drift layer, the baselayer, and the emitter layer through the insulating film; asecond-conductivity-type collector layer that is provided on a secondmain surface of the drift layer and has an impurity concentration morethan that of the drift layer; and a first-conductivity-type broad bufferregion which is provided in the drift layer and has an impurityconcentration more than that of the drift layer and in which a localmaximum value of an impurity concentration distribution is less than theimpurity concentration of the base layer and the collector layer. Thetotal amount of the net doping concentration of the broad buffer regionis equal to or more than 4.8×10¹¹ atoms/cm² and equal to or less than1.0×10¹² atoms/cm², and the resistivity ρ₀ (Ωcm) of the drift layersatisfies 0.12V₀≤ρ₀≤0.25V₀ with respect to a rated voltage V₀ (V).

The total amount of the net doping concentration of the broad bufferregion may be equal to or more than 5.2×10¹¹ atoms/cm² and equal to orless than 1.0×10¹² atoms/cm², and the resistivity ρ₀ (Ωcm) of the driftlayer may satisfy 0.133V₀≤ρ₀≤0.25V₀ with respect to the rated voltage V₀(V).

A plurality of broad buffer regions may be provided in the drift layer.

A ratio γ of the sum of the widths of the plurality of broad bufferregions to the width of the drift layer, a ratio η of the sum ofreductions in the electric field intensities of the plurality of broadbuffer regions to a critical electric field intensity when anreverse-bias voltage with the same level as a breakdown voltage isapplied, and a deviation ratio α of a measured value to a standard valueof the donor concentration of a substrate which will be the drift layermay satisfy 4α(γ/η)/{(2−α) (2+α)}<α.

The semiconductor device according to the above-mentioned aspect mayfurther include a first-conductivity-type field stop layer that comesinto contact with the drift layer or the broad buffer region on thefirst main surface of the substrate and comes into contact with thecollector layer on the second main surface.

The semiconductor device according to the above-mentioned aspect mayfurther include a first-conductivity-type field stop layer that comesinto contact with the drift layer or the broad buffer region on thefirst main surface side of the substrate and comes into contact with thecollector layer on the second main surface. The total amount of the netdoping concentration of the drift layer, the broad buffer region, andthe field stop layer may be equal to or more than 1.2×10¹² atoms/cm² andequal to or less than 2.0×10¹² atoms/cm².

The drift layer may be an FZ silicon substrate.

In order to solve the above-mentioned problems and achieve the objectsof the invention, according to still another aspect of the invention,there is provided a method of manufacturing a semiconductor deviceincluding a first first-conductivity-type semiconductor layer, a secondsecond-conductivity-type semiconductor layer that is provided on onemain surface of the first semiconductor layer and has an impurityconcentration more than that of the first semiconductor layer, a thirdfirst-conductivity-type semiconductor layer that is provided on theother main surface of the first semiconductor layer and has an impurityconcentration more than that of the first semiconductor layer, and afirst-conductivity-type broad buffer region which is provided in thefirst semiconductor layer interposed between the second semiconductorlayer and the third semiconductor layer and has an impurityconcentration more than that of the first semiconductor layer and inwhich a local maximum value of an impurity concentration distribution isless than the impurity concentration of the second semiconductor layerand the third semiconductor layer. The method includes: a first formingstep of forming the second semiconductor layer on the one main surfaceof the first semiconductor layer; and a second forming step ofirradiating the second semiconductor layer on the first semiconductorlayer with a hydrogen ion at a projected range to the firstsemiconductor layer and performing a heat treatment at a temperature of300° C. or more to 550° C. or less, thereby forming the broad bufferregion in the first semiconductor layer. In the second forming step, thebroad buffer region having a total net doping concentration of 4.8×10¹¹atoms/cm² or more to 1.0×10¹² atoms/cm² or less is formed in the firstsemiconductor layer, and the resistivity ρ₀ of the first semiconductorlayer satisfies 0.12V₀≤ρ₀≤0.25V₀ with respect to a rated voltage V₀ (V).

The method of manufacturing a semiconductor device according to theabove-mentioned aspect may further include an introducing step ofperforming a heat treatment at a temperature of 1000° C. or more in anoxidizing atmosphere to introduce oxygen into the first semiconductorlayer before the first forming step.

In the introducing step, the oxygen may be introduced at a concentrationof 1×10¹⁶ atoms/cm³ or more into the first semiconductor layer.

In order to solve the above-mentioned problems and achieve the objectsof the invention, according to yet another aspect of the invention,there is provided a method of manufacturing a semiconductor deviceincluding a first first-conductivity-type semiconductor layer, a secondsecond-conductivity-type semiconductor layer that is provided on onemain surface of the first semiconductor layer and has an impurityconcentration more than that of the first semiconductor layer, a thirdfirst-conductivity-type semiconductor layer that is provided on theother main surface of the first semiconductor layer and has an impurityconcentration more than that of the first semiconductor layer, and afirst-conductivity-type broad buffer region which is provided in thefirst semiconductor layer and has an impurity concentration more thanthat of the first semiconductor layer and in which a local maximum valueof an impurity concentration distribution is less than the impurityconcentration of the second semiconductor layer and the thirdsemiconductor layer. The method includes a second forming step ofirradiating the other main surface of the first semiconductor layer witha hydrogen ion at a projected range to a portion of the firstsemiconductor layer deeper than a position where the third semiconductorwill be formed by a subsequent step and performing a heat treatment at atemperature of 300° C. or more to 550° C. or less, thereby forming thebroad buffer region in the first semiconductor layer. In the secondforming step, the broad buffer region having a total net dopingconcentration of 4.8×10¹¹ atoms/cm² or more to 1.0×10¹² atoms/cm² orless is formed in the first semiconductor layer, and the resistivity ρ₀of the first semiconductor layer satisfies 0.12V₀≤ρ₀≤0.25V₀ with respectto a rated voltage V₀ (V).

The method of manufacturing a semiconductor device according to theabove-mentioned aspect may further include an introducing step ofperforming a heat treatment at a temperature of 1000° C. or more in anoxidizing atmosphere to introduce oxygen into the first semiconductorlayer before the first forming step.

In the introducing step, the oxygen may be introduced at a concentrationof 1×10¹⁶ atoms/cm³ or more into the first semiconductor layer.

In the second forming step, a hydrogen-induced donor may be formed bythe irradiation with the hydrogen ion, thereby forming the broad bufferregion.

The first semiconductor layer may be an FZ silicon substrate.

According to the invention, the broad buffer region is provided in thefirst semiconductor layer (drift layer) with the resistivity ρ₀ (Ωcm)which satisfies 0.12V₀≤ρ₀≤0.25V₀ with respect to the rated voltage V₀(V). The total amount of the net doping concentration of the broadbuffer region is equal to or more than 4.8×10¹¹ atoms/cm² and equal toor less than 1.0×10¹² atoms/cm². In this way, even when a variation inthe resistivity of the first semiconductor layer is about ±12%, it ispossible to reduce the range in which the breakdown voltage of thesemiconductor device is changed according to the variation in theresistivity of the first semiconductor layer. In addition, it ispossible to reduce the range in which the switching characteristics ofthe semiconductor device are changed according to the variation in theresistivity of the first semiconductor layer.

In addition, when a plurality of broad buffer regions are formed in thedrift layer, the expansion of a space charge region during switching canbe finely controlled.

After the second semiconductor layer (anode/base layer) is formed on onemain surface of the first semiconductor layer, the one main surface orthe other main surface of the first semiconductor layer is irradiatedwith hydrogen ions at a projected range to a portion deeper than thesecond semiconductor layer or the third semiconductor layer(cathode/collector layer) which is formed in the subsequent process anda heat treatment is performed at a temperature of 300° C. or more to550° C. or less. In this way, the broad buffer region can be formed inthe first semiconductor layer (drift layer) under the above-mentionedconditions. In this case, the resistivity ρ₀ (Ωcm) of the firstsemiconductor layer satisfies the above-mentioned conditions withrespect to the rated voltage V₀ (V). In this way, even when a variationin the resistivity of the first semiconductor layer is about ±12%, it ispossible to reduce the range in which the breakdown voltage of thesemiconductor device is changed according to the variation in theresistivity of the first semiconductor layer. In addition, it ispossible to reduce the range in which the switching characteristics ofthe semiconductor device are changed according to the variation in theresistivity of the first semiconductor layer.

In addition, a reduction in the mobility of electrons and holes in thebroad buffer region can be prevented when the substrate is irradiatedwith the hydrogen ions in the second forming step.

In the invention, a semiconductor device with a broad buffer structurecan be manufactured at a low cost, using an FZ wafer.

Effect of the Invention

According to the invention, the effect of reducing a variation in abreakdown voltage and a variation in switching characteristics can beobtained. In addition, the effect of reducing manufacturing costs can beobtained.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram illustrating the structure of a semiconductor deviceand a net doping concentration distribution according to a firstembodiment.

FIGS. 2(a) through 2(g)-1 are diagrams illustrating a process ofmanufacturing the semiconductor device according to the firstembodiment.

FIGS. 3(a) through 3(g)-1 are diagrams illustrating the process ofmanufacturing the semiconductor device according to the firstembodiment.

FIG. 4 is a characteristic diagram illustrating the relation betweenbulk resistivity and a breakdown voltage of the semiconductor device.

FIG. 5 is a characteristic diagram illustrating the relation betweenbulk resistivity and the width of a variation in the breakdown voltageof the semiconductor device.

FIG. 6 is a diagram illustrating the structure of a semiconductor deviceand a net doping concentration distribution according to the relatedart.

FIG. 7 is a diagram illustrating the structure of a semiconductor deviceand a net doping concentration distribution according to a secondembodiment.

FIG. 8 is a diagram illustrating the structure of a semiconductor deviceand a net doping concentration distribution according to a thirdembodiment.

FIGS. 9(a) through 9(i) are diagrams illustrating a process ofmanufacturing the semiconductor device according to the thirdembodiment.

FIGS. 10(a) through 10(h) are diagrams illustrating another example ofthe process of manufacturing the semiconductor device according to thethird embodiment.

FIGS. 11(a) through 11(i) are diagrams illustrating another example ofthe process of manufacturing the semiconductor device according to thethird embodiment.

FIGS. 12(a) through 12(g) are diagrams illustrating another example ofthe process of manufacturing the semiconductor device according to thethird embodiment.

FIG. 13 is a diagram illustrating the structure of a semiconductordevice and a net doping concentration distribution according to a fourthembodiment.

FIGS. 14(a) through 14(d) is a characteristic diagram illustrating therelation between a net doping concentration distribution of a driftlayer and an internal electric field intensity distribution when anreverse-bias voltage is applied.

BEST MODES FOR CARRYING OUT THE INVENTION

Hereinafter, a semiconductor device and a method of manufacturing thesame according to exemplary embodiments of the invention will bedescribed in detail with reference to the accompanying drawings. Theinvention is not limited to the following embodiments as long as it doesnot depart from the scope of the invention. In the followingdescription, one conductivity type is an n type and the otherconductivity type is a p type. However, the same effect is obtained eventhough the types are reversed.

First Embodiment

A diode in which a silicon wafer is irradiated with proton ions (H⁺) anda broad buffer structure is formed in an n⁻ drift layer in order tocontrol the impurity concentration of the n⁻ drift layer in the siliconwafer and a method of manufacturing the diode will be described below.

FIG. 1 is a diagram illustrating the structure of a semiconductor deviceand a net doping concentration distribution according to a firstembodiment. As illustrated in the cross-sectional view (the upper sideof the plane of paper) of the semiconductor device in FIG. 1, the diodeaccording to the first embodiment is formed on an n-type semiconductorsubstrate (wafer). The bulk resistivity of the wafer is ρ₀ (Ωcm). A panode layer 2 is formed on one main surface of the wafer. An n⁺ cathodelayer 3 is formed on the other main surface of the wafer. A portion(first semiconductor layer) of the semiconductor substrate interposedbetween the p anode layer 2 (second semiconductor layer) and the n⁺cathode layer 3 (third semiconductor layer) is an n⁻ drift layer 1. Ananode electrode 4 is formed on the surface of the p anode layer 2. Acathode electrode 5 is formed on the surface of the n⁺ cathode layer 3.

In FIG. 1, as illustrated in a characteristic diagram illustrating therelation between the distance from the anode electrode 4 and the netdoping concentration (log) (the lower side of the plane of paper), thenet doping concentration of the n⁻ drift layer 1 has a mountain-shapedprofile in which it is a peak in the vicinity of the middle of the n⁻drift layer 1 and is reduced with a certain gradient toward the p anodelayer 2 and the n⁺ cathode layer 3, and there is a mound-shaped regionin which is the net-doping concentration is higher than that of the n⁻drift layer 1. The n-type mound-shaped region is referred to as a broadbuffer region 6. The local maximum value of the impurity concentrationdistribution of the broad buffer region 6 is less than the impurityconcentration of the n+ cathode layer 3 and the p anode layer 2. Thatis, the broad buffer region 6 is provided in the n⁻ drift layer 1, andhas a net doping concentration that is more than the bulk impurityconcentration of the wafer and is less than the impurity concentrationof the n⁺ cathode layer 3 and the p anode layer 2.

The structure of the diode according to the invention has the followingtwo important points: the bulk resistivity ρ₀ (Ωcm) of the semiconductorsubstrate (wafer) satisfies the following Expression 2 with respect tothe rated voltage V₀ (V) of the diode; and the effective dose (the totalamount of the net doping concentration of the same layer) of the broadbuffer region 6 is equal to or more than 4.8×10¹¹ atoms/cm² and equal toor less than 1.0×10¹² atoms/cm².

0.12V ₀≤ρ₀≤0.25V ₀  [Expression 2]

FIGS. 2 and 3 are diagrams illustrating a process of manufacturing thesemiconductor device according to the first embodiment. The broad bufferregion 6 may be formed by performing irradiation with protons H⁺ 11 (seeFIGS. 2(c) and 3(c)) and a heat treatment on the wafer including the panode layer 2 and the anode electrode 4 formed on one main surfacethereof from the anode electrode. Next, the process of manufacturing thesemiconductor device according to the first embodiment will be describedin detail with reference to FIGS. 2 and 3. In this embodiment, forexample, a case in which the diode (rated voltage: V₀=1200 V; and ratedcurrent: 150 A) with the dimensions and net doping concentrationillustrated in FIG. 1 is manufactured will be described.

FIGS. 2(a) to 2(g) sequentially illustrated the main manufacturingprocesses of the diode. First, as a wafer (semiconductor substrate), anFZ wafer 10 with a resistivity of 144 Ωcm to 300 Ωcm, for example, 150Ωcm (phosphorus concentration: 2.0×10¹³ atoms/cm³) and a thickness ofabout 500 μm is prepared. The FZ wafer 10 is used as the firstsemiconductor layer. Hereinafter, the impurity concentration of the FZwafer 10 is referred to as bulk concentration and the resistivitythereof is referred to as bulk resistivity (FIG. 2(a)). The relationbetween the resistivity ρ (Ωcm) and donor concentration N (atoms/cm³) isrepresented by ρ=4.596×10¹⁵/N when the resistivity is more than 1 Ωcm.

Then, a standard diode manufacturing process is performed to form the panode layer 2 which will be the second semiconductor layer, a edgetermination structure portion including a guard ring (not illustrated),an insulating film 12, and the anode electrode 4 on one main surface ofthe FZ wafer 10. The impurity concentration of the p anode layer 2 is,for example, 5×10¹⁶ atoms/cm³ and the junction depth thereof from thesurface is, for example, 3 μm. In addition, the anode electrode 4 ismade of an aluminum alloy (hereinafter, referred to as Al—Si (1%)), suchas aluminum silicon (AlSi) including about 1 wt % of silicon (FIG.2(b)).

Then, the surface of the anode electrode 4 is irradiated with a protonH⁺ 11 accelerated by a cyclotron. At that time, the acceleration voltageof the cyclotron is, for example, 7.9 MeV, and the dose of the proton H⁺11 is, for example, 2.0×10¹² atoms/cm². In addition, an aluminumabsorber (not illustrated) is used and the thickness of the aluminumabsorber is adjusted to irradiate the FZ wafer 10 with the proton H⁺ 11through the aluminum absorber such that the range of the proton H⁺ 11from the surface of the FZ wafer 10 is 60 μm. In FIG. 2(c), a crystaldefect 13 occurring in the FZ wafer due to the irradiation with theproton H⁺ 11 is represented by X (FIG. 2(c)).

Then, for example, a heat treatment is performed at 350° C. for 1 hourin a nitrogen atmosphere (which may include hydrogen) to recover thecrystal defect 13. In this way, an n-type high-concentration region isformed so as to be spread to about ±20 μm from a depth of 60 μm from thesurface of the wafer. The high-concentration region is the broad bufferregion 6 (within two dashed lines) (FIG. 2(d)).

Then, grinding and wet etching 30 is performed on the other main surface(the rear surface of the FZ wafer 10) of the FZ wafer 10 such that theFZ wafer 10 has a desired thickness. In this stage, the thickness of theFZ wafer 10 is typically in the range of 100 μm to 160 μm when the ratedvoltage V₀ is 1200 V. In the first embodiment, in this stage, thethickness of the FZ wafer 10 is 120 μm (FIG. 2(e)).

Then, n-type impurity ions, such as phosphorus ions, are injected intothe surface (rear surface) of the FZ wafer 10 subjected to the grindingand wet etching 30. In this case, the acceleration voltage is, forexample, 50 keV, and the dose of phosphorus is, for example, 1×10¹⁵atoms/cm² (impurity concentration; 1×10¹⁹ atoms/cm³) (FIG. 2(f)). Then,for example, a YAG second harmonic laser emits a laser beam to theion-injected surface using a double pulse method. The injected n-typeimpurity ions, such as the injected phosphorus ions, are electricallyactivated by the laser irradiation and a third semiconductor layer whichwill be the n⁺ cathode layer 3 is formed (FIG. 2(g)).

The double pulse method continuously radiates a plurality of pulsedlaser beams whose irradiation timings deviate from each other by apredetermined delay time from a plurality of laser irradiation devicesto each laser beam irradiation area. The double pulse method isdisclosed in JP-A-2005-223301. When the laser beams are radiated by thedouble pulse method, the total energy density for each laser beamirradiation area is, for example, 3 J/cm². In addition, the double pulsedelay time is, for example, 300 nsec.

Finally, metal materials are deposited on the surface of the n+ cathodelayer 3 in the order of aluminum, titanium, nickel, and gold to form thecathode electrode 5 which comes into ohmic contact with the surface ofthe n⁺ cathode layer 3. In this way, the diode is completed. A portionof the semiconductor substrate between the p anode layer 2 and the n⁺cathode layer 3 in the FZ wafer 10 is the n⁻ drift layer 1. Acharacteristic diagram (g-1) illustrated on the right side of FIG. 2(g)is a net doping concentration profile corresponding to thecross-sectional view of the diode illustrated in FIG. 2(g).

In addition, it is preferable to add the following manufacturingprocesses before the diode manufacturing process starts. First, althoughnot illustrated in the drawings, phospho-silicate glass is applied ontothe FZ wafer 10 illustrated in FIG. 2(a) and phosphorus and oxygen arediffused and introduced from both surfaces of the wafer by a drive-inprocess at 1300° C. for 10 hours. Then, the phosphorus-diffused layer onone main surface of the wafer is scraped away and then mirror-polished.Then, oxygen is introduced with a maximum dose of 1×10¹⁸ atoms/cm³corresponding to solid solubility at 1300° C. only into the other mainsurface (for example, the rear surface) of the wafer, thereby forming awafer in which the impurity concentration of the phosphorus-diffusedlayer (surface concentration: 1×10²⁰ atoms/cm³; and depth; about 80 μm)is more than the concentration of the wafer. Then, the diodemanufacturing process (process after FIG. 2(b)) is performed using thewafer. The reason why it is preferable to add the above-mentionedprocess is as follows. As disclosed in Patent Literature 3, thephosphorus-diffused layer which is formed on the rear surface of thewafer and has an impurity concentration more than the concentration ofthe wafer acts as a layer for gettering impurities, such as heavy metal,and the concentration of oxygen from the surface of the anode layer tothe peak (hereinafter, referred to as peak concentration) of the netdoping concentration of the broad buffer region (that is, the range Rpof the proton H⁺) increases, which allows prevention of a reduction inthe mobility of electrons and holes in the broad buffer region due toirradiation with the proton H⁺ 11.

When a wafer including a low concentration of oxygen, such as the FZwafer using polycrystalline silicon as a raw material, is used, adrive-in process or a thermal oxidation process may be performed at atemperature of 1000° C. or more in an atmosphere including oxygen. Thereason is that oxygen is infiltrated and diffused in the siliconsubstrate by the heat treatment and the oxygen concentration of thewafer increases. In this case, oxygen is distributed at a concentrationof 1×10¹⁶ atoms/cm³ or more to 1×10¹⁷ atoms/cm³ or less, which is asufficiently high impurity concentration to be detected by Secondary IonMass Spectrometry (SIMS) measurement, and the same effect as that ofpreventing a reduction in the mobility of electrons and holes in thebroad buffer region can be obtained. The oxygen concentration may beequal to or more than 1×10¹⁸ atoms/cm³ by a heat treatment at atemperature of 1300° C. or more. However, when the oxygen concentrationis more than the above-mentioned value, an oxygen deposit or anoxygen-induced defect is likely to be generated. Therefore, it ispreferable that oxygen concentration be equal to or less than 1×10¹⁸atoms/cm³. That is, it is preferable that the oxygen concentration fromthe surface of the anode layer to the peak concentration of the broadbuffer region (that is, the range Rp of the proton H⁺) be equal to ormore than 1×10¹⁶ atoms/cm³ and equal to or less than 1×10¹⁸ atoms/cm³.

In addition, a complex defect including holes formed when hydrogen isintroduced into the wafer by the irradiation of the wafer with theproton H⁺ is formed together with donors by the introduced oxygen in anactive portion in which the main current flows in the semiconductordevice as well as the edge termination structure portion. Thephosphorus-diffused layer with impurity concentration more than theconcentration of the n-type wafer is also formed immediately below theedge termination structure portion. As a result, the resistivity of thewafer increases, and the impurity concentration immediately below theedge termination structure portion increases, which results in anincrease in the equipotential line density of a depletion layer which isspread when a reverse bias is applied to the main pn junction. In thisway, it is possible to reduce the influence of the breakdown voltage byexternal charge through the insulating film on the surface of the edgetermination structure portion. In addition, when defect densityimmediately below the edge termination structure portion increases, thelifetime of the vicinity thereof is reduced. Therefore, it is possibleto prevent the concentration of a current or a residual carrier on theboundary between the active portion and the edge termination structureportion when power is turned on and during reverse recovery.

In addition to the hydrogen (H⁺) ion, a lithium ion (Li⁺) or an oxygenion (O⁻) is changed to the n-type donor by the radiated charged particle(ion). However, the lithium ion or the oxygen ion has a mass more thanthe hydrogen ion and it is difficult to obtain a sufficiently wide rangewith the same energy. Therefore, when ions need to be injected to adepth of about 60 μm from the surface of the wafer, the hydrogen ion(H⁺) is most preferable.

FIG. 4 is a characteristic diagram illustrating the relation between thebulk resistivity and the breakdown voltage of the semiconductor device.FIG. 6 is a diagram illustrating the structure and net dopingconcentration distribution of a semiconductor device according to therelated art. FIG. 4 illustrates the diode (the diode illustrated in themain part cross-sectional view of FIG. 1; hereinafter, referred to as anexample) according to the invention in which the broad buffer region 6is provided in the n drift layer 1, a diode (first conventional example)according to the related art in which a broad buffer region is providedin the n⁻ drift layer, and a diode (a diode illustrated in the main partcross-sectional view of FIG. 6 (hereinafter, referred to as a secondconventional example)) including the n⁻ drift layer 1 which does notinclude the broad buffer region and has a flat doping concentrationdistribution (which is described as a flat concentration distribution inFIG. 4) according to the related art. The diodes according to the firstand second conventional examples are given as comparative examples. Thethickness of the n⁻ drift layer 1 is 120 μm (as illustrated in FIG. 1,strictly, the thickness of the n⁻ drift layer 1 is 116.5 μm obtained bysubtracting the thickness of the p anode layer 2 and the n+ cathodelayer 3 from 120 μm. However, hereinafter, for convenience ofexplanation, the thickness of the n⁻ drift layer 1 is described to be120 μm).

For the diodes (according to the example and the first conventionalexample) in which the broad buffer region 6 is provided in the n⁻ driftlayer 1, a change in the breakdown voltage of the semiconductor devicewith respect to the resistivity (the horizontal axis) of the wafer(substrate) when the effective dose of the broad buffer region 6 ischanged in various ways, that is, when the effective dose of the broadbuffer region 6 is 1.0×10¹¹ atoms/cm², 2.5×10¹¹ atoms/cm², 4.0×10¹¹atoms/cm², 4.8×10¹¹ atoms/cm², 5.0×10¹¹ atoms/cm², 5.2×10¹¹ atoms/cm²,5.7×10¹¹ atoms/cm², and 6.0×10¹¹ atoms/cm². In the example, theeffective dose of the broad buffer region 6 is equal to or more than4.8×10¹¹ atoms/cm². For the diode (second conventional example)according to the related art in which the n⁻ drift layer 1 has a flatdoping concentration distribution, when the resistivity of the waferincluding the n⁻ drift layer 1 with a thickness of 120 μm is changed, abreakdown voltage value is represented by a plot line with a name “flatconcentration distribution according to the related art”.

First, in the flat doping concentration distribution according to therelated art, under the condition that the thickness of the n⁻ driftlayer is constant (120 μm), when the resistivity increases, thebreakdown voltage increases and is converged on a constant value. Ingeneral, when devices are designed, the thickness of the n⁻ drift layerand the resistivity are selected considering the balance among thebreakdown voltage, loss when power is turned on, and switchingcharacteristics. For example, the thickness of the n⁻ drift layer isabout 0.1V₀ (μm) with respect to the rated voltage V₀ (V). In addition,the rated voltage V₀ (V) and the typical resistivity ρ₀ (Ωcm) of thesubstrate are empirically represented by the following Expression 3.

ρ₀=0.045V ₀  [Expression 3]

For example, the typical resistivity ρ₀ (Ωcm) of the substrate is about27 Ωcm at a rated voltage V₀ of 600 V, about 54 Ωcm at a rated voltageV₀ of 1200 V, about 77 Ωcm at a rated voltage V₀ of 1700 V, about 149Ωcm at a rated voltage V₀ of 3300 V, about 203 Ωcm at a rated voltage V₀of 4500 V, and about 293 Ωcm at a rated voltage V₀ of 6500 V. Inaddition, the typical resistivity ρ₀ (Ωcm) of the substrate may be setto be 1.5 times more than the above-mentioned value, particularly, at ahigh rated voltage of 1700 V or more, considering an operationaltolerance. In order to suppress a high overshoot voltage duringswitching, the typical resistivity ρ₀ (Ωcm) of the substrate may bereduced to 80% of the above-mentioned value.

At a rated voltage V₀ of 1200 V, the manufactured device has a highactual breakdown voltage with a margent of about 20% over the ratedvoltage. For example, the actual breakdown voltage is set to 1400 V at arated voltage V₀ of 1200 V. In this case, as can be seen from FIG. 4, inthe diode according to the related art which is represented by a flatconcentration distribution, the resistivity of the substrate at whichthe actual breakdown voltage is 1400 V is 46 Ωcm. Similarly, as can beseen from FIG. 4, the resistivity values at which the actual breakdownvoltage is 1400 V in the diodes in which the effective doses of thebroad buffer region are 1×10¹¹ atoms/cm², 2.5×10¹¹ atoms/cm², 4×10¹¹atoms/cm², 4.8×10¹¹ atoms/cm², 5.0×10¹¹ atoms/cm², 5.2×10¹¹ atoms/cm²,5.7×10¹¹ atoms/cm², and 6×10¹¹ atoms/cm² are 55 Ωcm, 68 Ωcm, 100 Ωcm,144 Ωcm, 150 Ωcm, 160 Ωm, 200 Ωcm, and 250 Ωcm, respectively.

As illustrated in FIG. 4, the range (hereinafter, referred to as aresistivity variation range) of a variation in the resistivity of thewafer is strongly reflected to the range of a variation in the breakdownvoltage of the semiconductor device, according to the resistivity of thewafer. That is, when the resistivity of the wafer varies within a givenwidth range (hereinafter, referred to as a resistivity variation width),the resistivity variation width is directly connected with the width ofa variation in the breakdown voltage of the semiconductor device(hereinafter, referred to as a breakdown voltage variation width). Inthe case of the second conventional example, for example, theresistivity at which the breakdown voltage is 1400 V is 46 Ωcm. In therange of about 30 Ωcm to about 80 Ωcm including the resistivity value of46 Ωcm, the breakdown voltage value varies greatly. For example, whenthe resistivity variation is 46 Ωcm±12% (about 41 Ωcm to 52 Ωcm), therange of a variation in the breakdown voltage (hereinafter, referred toas a breakdown voltage variation range) corresponding to the resistivityvariation range is from about 1290 V to about 1480 V. That is, thebreakdown voltage variation range corresponds to a breakdown voltagevariation width of about 13.7% with respect to a center value of 1385 V.The breakdown voltage variation width needs to be a small value requiredby the market, for example, 5% or less. Therefore, in order to satisfythe breakdown voltage variation width required by the market, theresistivity variation width needs to be further reduced. However, asdescribed above, the range of the resistivity variation width of the FZwafer with high resistivity (for example, 20 Ωcm or more) which iswarranted by the wafer manufacturer is ±12% (variation width: 24%) orless in gas doping and is ±8% (variation width: 16%) or less in aneutron irradiation wafer. Even in the neutron irradiation wafer, thebreakdown voltage variation width is significantly more than anallowable value.

In the first conventional example (the diode including the broad bufferstructure according to the related art), in the case of a broad bufferdiode with an effective dose of 2.5×10¹¹ atoms/cm², the resistivity atwhich the breakdown voltage is 1400 V (rated voltage V₀=1200 V) is about68 Ωcm, as illustrated in FIG. 4 (see A in FIG. 4). When a variation inthe resistivity is ±12%, the resistivity variation range is from about60 Ωcm to 76 Ωcm. As can be seen from FIG. 4, the breakdown voltagevariation range corresponding to the resistivity variation range of 60Ωcm to 76 Ωcm is from 1320 V to 1460 V. The breakdown voltage variationrange corresponds to a breakdown voltage variation width of about 10.1%with respect to a center value of 1390 V. The breakdown voltagevariation width is less than a breakdown voltage variation width of13.7% in the first conventional example, but is more than a breakdownvoltage variation width of 5% required by the market. Therefore, thebreakdown voltage variation width is not still enough. Similarly, in thecase of a broad buffer diode with an effective dose of 4.0×10¹¹atoms/cm², as can be seen from FIG. 4, the resistivity at which thebreakdown voltage is 1400 V (rated voltage V₀=1200 V) is about 100 Ωcm.The breakdown voltage variation range corresponding to a resistivityvariation of ±12% is from 1340 V to 1430 V and the breakdown voltagevariation width is about 6.5%. Therefore, a breakdown voltage variationwidth of 5% or less which is required by the market is not satisfiedyet.

On the other hand, in the example (the diode with the broad bufferstructure according to the invention), in the case of the broad bufferdiode in which the effective dose of the broad buffer region is 4.8×10¹¹atoms/cm², as can be seen from FIG. 4 (see B in FIG. 4), the resistivityat which the breakdown voltage is 1400 V is 144 Ωcm. When a variation inthe resistivity is 12%, the resistivity variation range is from 126.7Ωcm to 161.3 Ωcm. The breakdown voltage variation range corresponding tothe resistivity variation range is from 1363 V to 1425 V. That is, thebreakdown voltage variation width is 4.4% with respect to a center valueof 1394 V. In the broad buffer diodes in which the effective doses are5.0×10¹¹ atoms/cm², 5.7×10¹¹ atoms/cm², and 6.0×10¹¹ atoms/cm²,similarly, as can be seen from FIG. 4, the resistivity valuescorresponding to a breakdown voltage of 1400 V are 150 Ωcm, 200 Ωcm, and250 Ωcm. When a variation in the resistivity is 12%, the resistivityvariation ranges are from 132 Ωcm to 168 Ωcm, from 176 Ωcm to 114 Ωcm,and from 220 Ωcm to 280 Ωcm. The breakdown voltage variation rangescorresponding to the resistivity variation ranges are sequentially from1371 V to 1431 V, from 1378 V to 1422 V, and from 1380 V to 1415 V. Thatis, the breakdown voltage variation widths are sequentially 4.3% withrespect to a center value of 1401 V, 3.1% with respect to a center valueof 1400 V, and 2.5% with respect to a center value of 1397 V. Therefore,the breakdown voltage variation width is reduced to the range ofslightly more than 2% to slightly more than 4%. Therefore, in all of theexamples, a breakdown voltage variation width of 5% required by themarket is satisfied.

FIG. 5 is a characteristic diagram illustrating the relation between thebulk resistivity and the breakdown voltage variation width of thesemiconductor device. The relation between the bulk resistivityillustrated in FIG. 4 and the breakdown voltage variation width (%) ofthe semiconductor device is illustrated in FIG. 5. That is, as describedwith reference to FIG. 4, the effective dose of the broad buffer regionis selected such that the actual breakdown voltage is 1400 V withrespect to a given bulk resistivity value, and the breakdown voltagevariation width (%) calculated from the breakdown voltage variationrange when a variation in each bulk resistivity is 12% was plotted onthe vertical axis (the horizontal axis indicates the bulk resistivity(Ωcm)).

In the diode (second conventional example) according to the related artwhich has a bulk resistivity of 46 Ωcm and does not include the broadbuffer region, the breakdown voltage variation width is 13.7%, which isa large value, and the breakdown voltage variation width required by themarket is not satisfied. Even in the structure in which the broad bufferregion is provided in the drift layer (first conventional example), whenthe bulk resistivity is a small value of 55 Ωcm, 68 Ωcm, and 100 Ωcm,the breakdown voltage variation widths are about 11.5%, about 10.1%, andabout 6.5%, which are more than 5.0%, and the breakdown voltagevariation width required by the market is not satisfied. Therefore, thisstructure is not included in the invention. When the broad buffer regionis provided in the drift layer, but the effective dose is too large, forexample, the effective dose is more than 1.0×10¹² atoms/cm², the bulkresistivity corresponding to a breakdown voltage of 1400 V is more than300 Ωcm. Therefore, this structure is not included in the invention. Thereason will be described below.

In contrast, in the diode (example) according to the invention in whichthe broad buffer region is provided in the drift layer, the breakdownvoltage variation width is 4.4% at a bulk resistivity of 144 Ωcm, 4.3%at a bulk resistivity of 150 Ωcm, 4.0% at a bulk resistivity of 160 Ωcm,3.1% at a bulk resistivity of 200 Ωcm, and 2.5% at a bulk resistivity of250 Ωcm. That is, the breakdown voltage variation width of thesemiconductor device is reduced to 5.0% or less which is required by themarket. As can be seen from FIG. 4, the effective doses of the broadbuffer region corresponding to the bulk resistivities of 144 Ωcm, 150Ωcm, 160 Ωcm, 200 Ωcm, and 250 Ωcm are 4.8×10¹¹ atoms/cm², 5.0×10¹¹atoms/cm², 5.2×10¹¹ atoms/cm², 5.7×10¹¹ atoms/cm², and 6.0×10¹¹atoms/cm², respectively. Therefore, as can be seen from FIG. 4, theeffective dose of the broad buffer region according to the invention isequal to or more than 4.8×10¹¹ atoms/cm² and equal to or less than6.0×10¹¹ atoms/cm². It was confirmed that, even when the effective doseof the broad buffer region increased to 1.0×10¹² atoms/cm², thebreakdown voltage variation width was further reduced and the bulkresistivity was equal to or less than 300 Ωcm.

That is, in the semiconductor device according to the invention, in thebroad buffer structure in which the effective dose is equal to or morethan 4.8×10¹¹ atoms/cm² and equal to or less than 1.0×10¹² atoms/cm²,the breakdown voltage variation width can be reduced to one-third orless of that in the diode according to the related art in which thebroad buffer region is not provided. In the broad buffer structure, theeffective dose is more preferably equal to or more than 5.0×10¹¹atoms/cm² and equal to or less than 1.0×10¹² atoms/cm² and is mostpreferably equal to or more than 5.2×10¹¹ atoms/cm² and equal to or lessthan 1.0×10¹² atoms/cm², which makes it be able to reliably reduce thebreakdown voltage variation width of the semiconductor device to 4% orless.

In particular, when the bulk resistivity is equal to or more than 144Ωcm, the breakdown voltage variation width of the semiconductor devicedoes not depend on the bulk resistivity. Of course, the breakdownvoltage variation width also includes a variation in a parameter, suchas the thickness of the n⁻ drift layer or an effective dose according tothe formation of the broad buffer region. However, a variation in thethickness of the drift layer may be 3% or less by a combination of theback grinding and etching of the wafer, and the effective dose may be 1%or less by the control of the injection of the proton H⁺ and anannealing temperature. Among factors determining the breakdown voltagevariation width, the most important factor is the resistivity variationwidth. Therefore, the effect obtained by reducing the breakdown voltagevariation width is large.

In the invention, the breakdown voltage variation width can be reducedat rated voltages other than the rated voltage V₀=1200 V. This isbecause the total doping concentration (dose) of the entire drift layeris constant (about 1.2×10¹² atoms/cm² or less), regardless of the ratedvoltage. At a rated voltage V₀ of 1200 V, when the bulk resistivity isequal to or more than 144 Ωcm, the breakdown voltage variation width isequal to or less than 5% which is required by the market. The numericalvalue “144” corresponds to about 12% (≈144/1200×100%) of the numericalvalue “1200” of the rated voltage. As illustrated in FIG. 5, when thebulk resistivity is equal to or more than 150 Ωcm corresponding to 12.5%of the numerical value “1200” of the rated voltage, the breakdownvoltage variation width is further reduced. When the bulk resistivity ofthe wafer is equal to or more than 160 Ωcm corresponding to 13.3% of thenumerical value “1200” of the rated voltage, the breakdown voltagevariation width is equal to or less than 4%, which is certainly lessthan a breakdown voltage variation width of 5% required by the market.Similarly, when the rated voltage V₀ is 600 V, the bulk resistivity is72 Ωcm (0.12V₀=0.12×600=72). Therefore, the breakdown voltage variationwidth is equal to or less than 5% at a bulk resistivity of 72 Ωcm ormore. Similarly, it was confirmed that the breakdown voltage variationwidth was reduced to 5% or less at a rated voltage V₀ of 1700 V and abulk resistivity of 204 Ωcm or more, at a rated voltage V₀ of 3300 V anda bulk resistivity of 396 Ωcm or more, and at a rated voltage V₀ of 4500V and a bulk resistivity of 540 Ωcm or more. Therefore, a necessarycondition is that the bulk resistivity of the semiconductor deviceaccording to the invention, that is, the resistivity ρ₀ of thesemiconductor substrate satisfies the following Expression 4.

ρ₀≥0.12V ₀  [Expression 4]

When the resistivity ρ₀ is preferably equal to or more than 0.125V₀ andmore preferably, equal to or more than 0.133V₀, the breakdown voltagevariation width can be reliably reduced to 5% or less.

When the resistivity ρ₀ is more than a necessary value, in general, thedepletion of the carriers is accelerated during switching and aswitching waveform is likely to oscillate. For example, it was confirmedthat, when the bulk resistivity was more than 300 Ωcm at a rated voltageV₀ of 1200 V, an oscillation phenomenon occurred due to the depletion ofthe carriers during reverse recovery even in the diode with the broadbuffer structure according to the invention in which the broad bufferregion was provided in the drift layer. Further, it was found that, whenthe bulk resistivity was too high, the oscillation phenomenon commonlyoccurred at other rated voltages. An important factor of this phenomenonis the total doping concentration (dose) of the entire n⁻ drift layer.This is because the expansion of a space charge region during reverserecovery depends on the total doping concentration (dose) according tothe Poisson equation and thus the total number of carriers swept is alsodetermined by the total doping concentration. Therefore, it wasconfirmed that the same oscillation phenomenon was occurred when thebulk resistivity was more than 300 Ωcm at a rated voltage V₀ of 1200 V,the bulk resistivity was more than 150 Ωcm at a rated voltage V₀ of 600V, the bulk resistivity was more than 425 Ωcm at a rated voltage V₀ of1700 V, the bulk resistivity was more than 825 Ωcm at a rated voltage V₀of 3300 V, and the bulk resistivity was more than 1125 Ωcm at a ratedvoltage V₀ of 4500 V. The relation ρ₀ 0.25V₀ is established between therated voltage V₀ and the bulk resistivity ρ₀. Therefore, the bulkresistivity ρ₀ needs to satisfy the following Expression 5.

ρ₀≤0.25V ₀  [Expression 5]

The important point of the broad buffer structure according to theinvention is that the broad buffer region is formed in a portion of then drift layer and comes into contact with a portion with substrateconcentration (bulk impurity concentration) or a portion with net dopingconcentration less than the substrate concentration. In this way, thebreakdown voltage can be determined independently from the bulkconcentration. As a result, the breakdown voltage variation width can bereduced. In a structure in which the broad buffer region is distributedover the entire n⁻ drift layer, the control of impurity concentrationand the breakdown voltage depend only on ion injection and driving. As aresult, when the rated voltage is changed, particularly, when thebreakdown voltage increases, hydrogen-induced donors are distributed ina wide range of 100 μm or more in the n⁻ drift layer and the impurityconcentration thereof needs to be reduced. At present, it is physicallyvery difficult to obtain the above-mentioned concentration distributionof the n⁻ drift layer.

In contrast, in the invention, the main rated voltage V₀ can bedetermined on the basis of the bulk resistivity ρ₀. The actual breakdownvoltage is determined by adding the impurity concentration of thehydrogen-induced donor to the bulk net doping concentration (that is,resistivity). Therefore, the invention can be applied regardless of thebreakdown voltage of the semiconductor device and reduce the influenceof the resistivity variation width on the breakdown voltage variationwidth with the effective dose of the hydrogen-associated donor with arelatively small error. In this way, a diode with a small breakdownvoltage variation width can be manufactured with ease.

In FIG. 2(c), the front surface (anode electrode) was irradiated withthe proton H⁺ 11. However, as illustrated in FIG. 3(c), the rear surface(cathode electrode) may be irradiated with the proton H⁺ 11. The otherprocesses of the method illustrated in FIG. 3 are the same as those ofthe manufacturing method illustrated in FIG. 2. That is, the differencebetween FIG. 2 and FIG. 3 is a process (c).

As described above, according to the semiconductor device of the firstembodiment, the broad buffer region 6 is provided in the n⁻ drift layer1, which is a substrate whose bulk resistivity ρ₀ (Ωcm) satisfiesExpression 2 with respect to the rated voltage V₀ (V). The total amountof the net doping concentration of the broad buffer region 6 is in theabove-mentioned range. In this way, even when a variation in the bulkresistivity is about ±12%, the range in which the breakdown voltage ofthe diode is changed with respect to a variation in the bulk resistivitycan be reduced. In addition, the range in which the switchingcharacteristics of the semiconductor device are changed with respect toa variation in the bulk resistivity can be reduced. Therefore, avariation in the breakdown voltage and a variation in the switchingcharacteristics can be reduced.

In addition, according to the method of manufacturing the semiconductordevice according to the first embodiment, after the p anode layer 2 isformed on one main surface of the FZ wafer 10 (n⁻ drift layer 1), thefront or rear surface of the FZ wafer 10 is irradiated with the protonH⁺ 11 at a projected range to a portion which is deeper than the p anodelayer 2 or the n⁺ cathode layer 3 which will be formed in the subsequentprocess, and a heat treatment is performed at a temperature of 300° C.or more to 550° C. or less. In this way, the broad buffer region 6 canbe formed in the n⁻ drift layer 1 under the above-mentioned condition.In this case, the resistivity (bulk resistivity) ρ₀ of the FZ wafer 10satisfies the above-mentioned condition with respect to the ratedvoltage V₀. In this way, even when a variation in the resistivity of theFZ wafer 10 is about ±12%, the range in which the breakdown voltage ofthe semiconductor device is changed with respect to a variation in theresistivity of the FZ wafer 10 can be reduced. In addition, the range inwhich the switching characteristics of the semiconductor device arechanged with respect to a variation in the resistivity of the FZ wafer10 can be reduced. Therefore, a variation in the breakdown voltage and avariation in the switching characteristics can be reduced.

Before the irradiation with the proton H⁺ 11 in order to form the broadbuffer region 6, oxygen is introduced into the FZ wafer 10 under theabove-mentioned conditions. In this way, a reduction in the mobility ofelectrons and holes in the broad buffer region 6 can be prevented whenthe wafer is irradiated with the proton H⁺ 11.

In addition, the use of the FZ wafer 10 allows a diode with the broadbuffer structure to be manufactured at a low cost. In this way,manufacturing costs can be reduced.

Second Embodiment

FIG. 7 is a diagram illustrating the structure of a semiconductor deviceand a net doping concentration distribution according to a secondembodiment. A plurality of broad buffer regions 6 according to the firstembodiment may be provided in an n⁻ drift layer 1.

In the second embodiment, as illustrated in FIG. 7, a plurality of broadbuffer regions 6 (three broad buffer regions in FIG. 7) are formed. Assuch, the plurality of broad buffer regions 6 allows fine control on theexpansion of a space charge region during switching. In the structure inwhich a plurality of broad buffer regions are formed, when the ratedvoltage V₀ is 1200 V, it is preferable that bulk resistivity be equal toor more than 144 Ωcm, which is the same as that in the first embodiment.In addition, when the plurality of broad buffer regions 6 are formed, itis easy to form the broad buffer regions with high impurityconcentration according to the number of broad buffer regions, ascompared to the structure in which one broad buffer region is formed.Therefore, a reduction in the electric field intensity of a space chargeregion is likely to be large during switching or when a power supplyvoltage is maintained, as compared to the structure in which one broadbuffer region is formed. As a result, the breakdown voltage of thesemiconductor device is reduced. Therefore, the bulk resistivity may befurther increased and it is preferable that the bulk resistivity beequal to or more than 0.15V₀. The upper limit of the bulk resistivity is0.25V₀, which is the same as described above. The other structures arethe same as those of the first embodiment.

Next, the operation and effect of the structure in which a plurality ofbroad buffer regions are formed are described. FIG. 14 is acharacteristic diagram illustrating the relation between the net dopingconcentration distribution of a drift layer and an internal electricfield intensity distribution when a reverse-bias voltage is applied. InFIG. 14, in a diode including the drift layer with a flat concentrationdistribution according to the related art and a diode including thedrift layer provided with a plurality of broad buffer regions accordingto the invention, the net doping concentration distribution of the driftlayer corresponds to the internal electric field intensity distributionwhen the reverse-bias voltage is applied. FIGS. 14(a) and 14(b) arediagrams illustrating an electric field intensity distribution ((a)) anda donor concentration distribution ((b)) when an reverse-bias voltagewith the same level as that of a breakdown voltage is applied and themaximum value of the electric field intensity becomes a criticalelectric field intensity E_(C) (about 2.5×10⁵V/cm) causing avalanchebreakdown in the diode with a flat concentration distribution accordingto the related art. FIGS. 14(c) and 14(d) are diagrams illustrating anelectric field intensity distribution ((c)) and a donor concentrationdistribution ((d)) when the reverse-bias voltage with the same level asthat of the breakdown voltage is applied and the maximum value of theelectric field intensity becomes the critical electric field intensityE_(C) in the diode with a plurality of broad buffer regions according tothe invention. In the two diodes, it is assumed that the standard valueof the donor concentration of an FZ bulk wafer is N₀ and the measuredvalue of the donor concentration of the FZ bulk wafer is (1+α)N₀ (or(1−α)N₀, α>0). Alternatively, when a series of element forming processesis performed, the standard deviation of the measured value of the donorconcentration of the FZ bulk wafer in the number of FZ bulk wafersprocessed as units which flow at the same time (for example, 50 FZ bulkwafers) may be (1+α)N₀ (or (1−α)N₀, α>0). That is, it is assumed thatthe variation rate of donor concentration is ±α (α>0).

In this embodiment, for example, a known spreading resistance profilingmethod or C-V method is used as a method of measuring the donorconcentration of the wafer. In FIGS. 14(a) and 14(c), for simplicity ofexplanation, a so-called non-punch through type is illustrated in whicha depletion layer does not reach an n-type cathode layer when a voltagewith the same level as that of the breakdown voltage is applied.However, a punch through type may be used in which the depletion layerreaches the n-type cathode layer. In this case, the following discussionis established, similarly to the non-punch through type.

For the diode according to the related art, when the Poisson equation issolved under the boundary condition that electric field intensity E is 0at a depth x₀ from a pn junction, a voltage value (breakdown voltagevalue) ϕ₀ when donor concentration is N₀ is ϕ₀=−(½)x₀E_(C). The maximumand minimum values ϕ± of the breakdown voltage value when bulk donorconcentration varies by (1±α)N₀ are ϕ±=ϕ₀/(1±α/2) when electric fieldintensity is zero at a position x± as the boundary condition. As aresult, the variation rate Δϕ/ϕ₀ of the breakdown voltage value is4α/{(2−α) (2+α)} (where Δϕ=ϕ⁻−ϕ₊).

In the diode including a plurality of broad buffer regions according tothe invention, strictly, when the Poisson equation is solved, the valueof the Poisson equation is complicated. Therefore, in this embodiment, asimple method is used to calculate the variation rate Δϕ/ϕ₀ of thevoltage value. First, as illustrated in FIG. 14(d), it is assumed that nbroad buffer regions which have a concentration that is β times morethan the bulk donor concentration N₀ and a width W₀ are formed. Inaddition, it is assumed that the impurity concentration of the broadbuffer region is ideally distributed and there is no variation in theimpurity concentration. It is assumed that β is greater than 1. In FIG.14(c), since the magnitude of the gradient of the electric fieldintensity of each of the broad buffer regions is β times more than thatof another broad buffer region, a reduction ΔE in the electric fieldintensity which is more than a bulk portion (concentration N₀) occurs.When the “reduction” in the electric field intensity continuously occursn times, the ratio γ of the total length of a portion in which the“reduction” in the electric field intensity does not occur, that is, abulk portion other than the broad buffer region with respect to theoverall width Wd of the drift layer is (W_(d)−nW₀)/W_(d). Since n≥2 and0<W₀<W_(d) are satisfied, γ is equal to or greater than 0 and equal toor less than 1. On the other hand, the ratio η of the electric fieldintensity ΔE which is reduced n times with respect to the maximum valueE_(C) of the same electric field intensity isΣ_(i)ΔE_(i)/E_(C)=qβN₀nW₀/(E_(C)ε₀ε_(si)) (where q is an elementaryelectric charge, ε₀ is the permittivity of vacuum, and ε_(si) is therelative permittivity of silicon). η is equal to or greater than 0 andequal to or less than 1. That is, it is assumed that the variation rateof the voltage value when a plurality of broad buffer regions areprovided is a value obtained by removing the contribution of the broadbuffer region which is not affected by a variation in bulk concentrationand the contribution of a portion in which electric field intensity is“reduced” in the broad buffer region from the variation rate in thediode with a flat concentration distribution according to the relatedart. On the basis of the assumption, the variation rate Δϕ/ϕ₀ of thevoltage value is obtained by multiplying the same rate in the diode witha flat concentration distribution according to the related art by afactor (γ/η). Therefore, Δϕ/v₀=4α(γ/η)/{(2−α) (2+α)} is established.When α is more than 0% and equal to or less than 12%, Δϕ/v₀ can beapproximate to 4α/{(2−α) (2+α)}≈α in the range and Δϕ/ϕ₀≈α(γ/η) isestablished. As the total number n of broad buffer regions increases, γis reduced. Therefore, the variation width Δϕ/ϕ₀ of the voltage value isreduced. In addition, the ratio η of the “reduction” in electric fieldintensity increases as the concentration of the broad buffer region ismore than the bulk concentration N₀ (that is, β increases) or the numbern of broad buffer regions increases. In addition, as the width W₀ of thebroad buffer region increases, η increases. Therefore, as the number ofbroad buffer regions with high concentration and a large widthincreases, theoretically, the variation rate Δϕ/ϕ₀ of the voltage(breakdown voltage) is reduced.

For example, for an FZ bulk wafer with a standard value of N₀=2×10¹³atoms/cm³, it is assumed that the variation rate α of N₀ is 12%, thenumber n of broad buffer regions formed is 3, the width W₀ is 6 μm, andthe multiple β of the concentration of the broad buffer region withrespect to N₀ is 10. In this case, since η is 2.19 and γ is 0.85, thevariation rate Δϕ/ϕ₀ of the breakdown voltage is 0.047 (4.7%), which issignificantly less than α, and a breakdown voltage variation width of 5%which is required by the market can be satisfied. Therefore, when aplurality of broad buffer regions are formed so as to satisfy theconditions of the following Expression 6, it is possible to reduce thevariation rate Δϕ/ϕ₀ of the breakdown voltage value to be less than thevariation rate of the FZ bulk wafer, which is preferable.

4α(γ/η)/{(2−α)(2+α)}<α  [Expression 6]

In addition, when a plurality of broad buffer regions are formed so asto satisfy 4α(γ/η)/{(2−α) (2+α)}≤0.05, it is possible to reliably reducethe variation rate Δϕ/ϕ₀ of the breakdown voltage value to be less thanthe variation rate of the FZ bulk wafer, which is preferable.

The above-mentioned consideration is ideal. For example, when β (amultiple of the concentration of the broad buffer region with respect tothe bulk concentration N₀) is too large or when n (the number of broadbuffer regions) is too large, the total “reduction” in the electricfield intensity increases and it is difficult to obtain a sufficientbreakdown voltage. When β is only a value which is sufficiently close to1, there is no large difference between the “reduction” ΔE in theelectric field intensity and a reduction in the bulk electric fieldintensity and the effect of the broad buffer region is reduced, whichmakes it difficult to prevent a breakdown voltage variation. Therefore,β, W₀, and n need to be determined on the basis of the breakdownvoltage, a variation in the breakdown voltage, and the effect ofpreventing reverse recovery oscillation. In addition, the shape of eachbroad buffer region is close to a Gaussian distribution by irradiationwith protons. A half width indicating the expansion of the Gaussiandistribution corresponds to W₀ and depends on proton accelerationenergy. When the broad buffer region is formed by irradiation with theprotons, for example, it is considered that donor concentration isintegrated over a given broad buffer region and the integrated value isaveraged by the half width. That is, since the “reduction” ΔE in theelectric field intensity is determined by the total sum (effective dose)of the integrated value of the broad buffer region, it does not greatlydepend on the difference between the shapes of the broad buffer regions(whether the shape is a rectangular shape or a Gaussian distribution).Therefore, the selection of β, W₀, and n is actually to determine thetotal integrated concentration of each broad buffer region. In addition,the above-mentioned Expression 6 is established, without depending onthe rated voltage. The reason is as follows. The dependence of thecritical electric field intensity E_(C) on the concentration of the bulkwafer which is determined according to the rated voltage is weak and itis considered that the dependence is a substantially constant value. Inaddition, the “reduction” ΔE in the electric field intensity does notdepend on the concentration of each broad buffer region or theconcentration of the bulk wafer, but depends on the integrated value(total concentration or an effective dose) of the concentration of eachbroad buffer region or the concentration of the bulk wafer.

The sum of the effective doses of the plurality of broad buffer regions6 (FIG. 7) may be equal to or more than 4.8×10¹¹ atoms/cm² and equal toor less than 1.0×10¹² atoms/cm², as in the first embodiment. In thesecond embodiment, when three broad buffer regions 6 have peakconcentrations and half widths illustrated in FIG. 7, the integratedconcentrations of the broad buffer regions are 4×10¹¹ atoms/cm² (thepeak concentration is 2×10¹⁴ atoms/cm³ and the half width is 20 μm),3×10¹¹ atoms/cm² (the peak concentration is 3×10¹⁴ atoms/cm³ and thehalf width is 10 μm), and 2×10¹¹ atoms/cm² (the peak concentration is4×10¹⁴ atoms/cm³ and the half width is 5 μm) in increasing order of thedistance from an anode electrode 4, and the sum of the integratedconcentrations is 9×10¹¹ atoms/cm².

It is preferable that the number of broad buffer regions 6 is two ormore and five or less so as to satisfy the above-mentioned effectivedose. When the rated voltage is equal to or more than 3300 V, the totalthickness of the drift region is equal to or more than 300 μm and thereis a sufficient margin for the thickness. Therefore, the number of broadbuffer regions may be five or more, if necessary. In addition, asdescribed above, in the case in which the sum of the integratedconcentrations of the broad buffer regions is constant, the shape orposition of each of the broad buffer regions is changed, the variationrate of the breakdown voltage is not changed by a value corresponding tothe change in the shape or position. For example, the depth of the broadbuffer region which is closest to the anode electrode from the anodeelectrode is set to be more than W_(d)/2, thereby ensuring a region withlow impurity concentration (high resistance) in the drift layer in thevicinity of the pn junction. In this way, it is possible to prevent anincrease in electric field intensity in the vicinity of the pn junctionduring reverse recovery or when a cosmic ray is incident. Alternatively,the number of broad buffer regions close to a cathode electrode from theintermediate position of the drift layer may be more than the number ofbroad buffer regions (including zero) close to the anode electrode fromthe intermediate position. In this case, the same effect is obtained,which is preferable.

Even when a plurality of broad buffer regions 6 are formed, the frontsurface or the rear surface may be irradiated with protons in order toform each of the broad buffer regions 6. In the case of a diode, for atleast the broad buffer region 6 closest to the anode layer, it ispreferable that the surface of the anode layer 2 be irradiated withprotons, thereby reducing the carrier lifetime values of a protontransmission region and a proton stop region to be less than that of thebulk.

As described above, according to the second embodiment, it is possibleto obtain the same effect as that of the first embodiment. Since aplurality of broad buffer regions 6 are formed in the n drift layer 1,it is possible to finely adjust the expansion of a space charge regionduring switching.

Third Embodiment

FIG. 8 is a diagram illustrating the structure of a semiconductor deviceand a net doping concentration distribution according to a thirdembodiment. The structure of the semiconductor devices according to thefirst and second embodiments may be applied to an IGBT.

As illustrated in the cross-sectional view (the upper side of the planeof paper) of the semiconductor device in FIG. 8, in the IGBT accordingto the third embodiment, a p base layer 22 is formed on the frontsurface (first main surface) of an n-type semiconductor substrate(wafer). A p collector layer 28 is formed on the rear surface (secondmain surface) of the wafer. A portion of the semiconductor substratebetween the p base layer 22 and the p collector layer 28 is an n⁻ driftlayer 21. Bulk resistivity ρ₀ (Ωcm) is the same as that in the firstembodiment. That is, the bulk resistivity is in the range represented bythe above-mentioned Expression 2 or the above-mentioned preferred range.An emitter electrode 24 is formed on the surface of the p base layer 22.A collector electrode 25 is formed on the surface of the p collectorlayer 28. A trench is formed in the front surface of the wafer so as toreach the n⁻ drift layer 21 through the p base layer 22 and a gateinsulating film 31 is formed on the inner wall of the trench. A gateelectrode 27 is buried in the trench through the gate insulating film31. An n emitter layer 29 is formed in the p base layer 22. The emitterelectrode 24 electrically connects the p base layer 22 and the n emitterlayer 29. In addition, the emitter electrode 24 is insulated from thegate electrode 27 by the gate insulating film 31 and an interlayerinsulating film 32 formed on the gate electrode 27.

In FIG. 8, as illustrated in a characteristic diagram (the lower side ofthe plane of paper) illustrating the relation between the distance fromthe emitter electrode 24 and net doping concentration (log), the netdoping concentration of the n drift layer 21 has a peak substantially inthe vicinity of the middle of the n⁻ drift layer 21 and is inclined soas to be reduced toward the p base layer 22 and the p collector layer28. That is, an n-type broad buffer region 26 which has an impurityconcentration more than that of the n⁻ drift layer 21 and has a netdoping concentration less than that of the p base layer 22 and the pcollector layer 28 is formed in the n⁻ drift layer 21. The effectivedose (the total amount of the net doping concentration of the samelayer) of the broad buffer region 26 is equal to or more than 4.8×10¹¹atoms/cm² and equal to or less than 1.0×10¹² atoms/cm² or in theabove-mentioned preferred range, which is the same as that in the diodeaccording to the first embodiment. The broad buffer region 26 may beformed by irradiating the wafer including the p base layer 22 and theemitter electrode 24 with a proton H⁺ 11 from the collector electrode 25and performing a heat treatment on the wafer. FIG. 8 illustrates an IGBTwith a trench gate structure, but an IGBT with a planar gate structuremay be used.

Since the p collector layer 28 is formed on the rear surface of theIGBT, minority carriers are injected into the rear surface. Therefore,during turn-off, it is necessary to prevent the injected minoritycarriers from reaching a space charge region through a charge neutralregion. In addition, when a voltage corresponding to the breakdownvoltage is applied, it is preferable that the charge neutral regionwhich is not depleted be ensured in the range of about 5 μm to about 20μm from the rear surface, in order to prevent avalanche breakdown.Therefore, it is preferable that the peak of the net dopingconcentration distribution of the broad buffer region 26 be provided soas to lean to the collector electrode 25 from the depth of the center ofthe n⁻ drift layer 21 to reliably prevent a depletion layer, therebyensuring the above-mentioned charge neural region.

Next, a process of manufacturing the IGBT according to the thirdembodiment will be described in detail. FIG. 9 is a diagram illustratinga process of manufacturing the semiconductor device according to thethird embodiment. FIGS. 10 to 12 are diagrams illustrating anotherexample of the process of manufacturing the semiconductor deviceaccording to the third embodiment. For example, a case in which an IGBT(rated voltage: V₀=1200 V; and rated current: 150 A) with the dimensionsand net doping concentration illustrated in FIG. 8 is manufactured willbe described.

An example of a method of manufacturing the IGBT according to the thirdembodiment will be described with reference to FIGS. 9(a) to 9(i).First, as a wafer (semiconductor substrate), an FZ wafer 10 with a bulkresistivity of 144 Ωcm to 300 Ωcm, for example, 150 Ωcm (phosphorusconcentration: 2.0×10¹³ atoms/cm³) and a thickness of about 500 μm isprepared. The FZ wafer 10 is referred to as a first semiconductor layer(FIG. 9(a)). As described in the first embodiment, oxygen with aconcentration higher than solid solubility at room temperature (forexample, 20° C.) may be diffused and introduced into the FZ wafer 10 inadvance by a drive-in process.

Then, the p base layer 22, a edge termination structure portionincluding a guard ring (not illustrated), a trench, the gate insulatingfilm 31 in the trench, the gate electrode 27, the n emitter layer 29,and the interlayer insulating film 32 are formed on one main surface ofthe FZ wafer 10 by a standard IGBT manufacturing process (FIG. 9(b)).The impurity concentration of the p base layer 22 is, for example,2×10¹⁷ atoms/cm³ and the junction depth thereof is, for example, 3 μmfrom the surface. The impurity concentration of the n emitter layer 29is 1×10²⁰ atoms/cm³ and the junction depth thereof is, for example, 0.5μm from the surface. The gate electrode 27 may be made of, for example,polysilicon.

Then, the front surface, the other main surface, (on which the collectorelectrode 25 will be formed later) of the FZ wafer 10 is irradiated withthe proton H⁺ 11 accelerated by a cyclotron (FIG. 9(c)). At that time,the acceleration voltage of the cyclotron is, for example, 7.9 MeV andthe dose of the proton H⁺ 11 is 1.0×10¹⁴ atoms/cm². In addition, analuminum absorber is used to adjust the thickness of the proton H⁺ 11such that it is 90 μm from the surface of the silicon substrate. Whenthe thickness of the FZ wafer 10 is, for example, 500 μm, the thicknessof the proton H⁺ 11 is adjusted such that the range of the proton H⁺ 11is 410 μm. This range may be adjusted by an acceleration voltage usingan electrostatic accelerator. In this case, the acceleration voltage is7.5 MeV. In FIG. 9(c), a crystal defect 13 which occurs in the FZ wafer10 due to irradiation with the proton H⁺ 11 is represented by X.

Then, a heat treatment is performed, for example, at 500° C. for 5 hoursin a nitrogen atmosphere (which may include hydrogen) to recover thecrystal defect 13. In this way, an n-type high-concentration region isformed before and after a depth of 30 μm from the rear surface of thewafer. A desired broad buffer region 26 is formed by thehigh-concentration region (FIG. 9(d)).

Then, the emitter electrode 24 is formed so as to come into contact withthe n emitter layer 29. In addition, a protective film (not illustrated)is formed on the edge termination structure portion including a guardring (FIG. 9(e)). The emitter electrode 24 is made of, for example,Al—Si (1%) and the protective film is, for example, a polyimide orsilicon nitride (SiN) film.

Then, the grinding and wet etching 30 is performed on the rear surfaceof the FZ wafer 10 to reduce the thickness of the FZ wafer 10 to adesired value (FIG. 9(f)). In this stage, the thickness of the FZ wafer10 is typically in the range of 100 μm to 160 μm when the rated voltageV₀ is 1200 V. In the third embodiment (FIG. 9), in this stage, thethickness of the FZ wafer 10 is 120 μm.

Then, the FZ wafer surface (rear surface) of the FZ wafer 10 subjectedto the grinding and wet etching 30 is irradiated with n-type impurities,such as protons H⁺ or phosphorus⁺ 15 which will form an n field stoplayer 23. The dose is set such that impurity concentration afteractivation (which will be described below) is, for example, 2×10¹⁶atoms/cm³ (FIG. 9(g)). Then, p-type impurities, such as boron⁺ 14 whichwill form the p collector layer 28, are introduced by ion injection(FIG. 9(h)). At that time, the acceleration voltage is, for example, 50keV and the dose is set such that impurity concentration afteractivation is 3×10¹⁷ atoms/cm³. The effective dose of the n field stoplayer 23 is set to the range which includes the broad buffer region 26and satisfies the above-mentioned effective dose condition.

Then, laser annealing is performed to electrically activate the ioninjection surface, thereby forming the p collector layer 28. In order toperform the activation, furnace annealing may be performed instead ofthe laser annealing. In the case of the furnace annealing, for example,a heat treatment is performed at 450° C. for 5 hours in a nitrogenatmosphere (which may include hydrogen) to perform the activation.

Finally, metal materials are deposited on the surface of the p collectorlayer 28 in the order of, for example, Al—Si (1%), titanium, nickel, andgold to form the collector electrode 25 which comes into ohmic contactwith the surface of the p collector layer 28. In this way, the IGBT iscompleted (FIG. 9(i)).

Next, modifications of the third embodiment will be described. Amodification (hereinafter, referred to as a second manufacturing method)of the method of manufacturing the IGBT illustrated in FIG. 9(hereinafter, referred to as a first manufacturing method) will bedescribed with reference to FIGS. 10(a) to 10(h). The secondmanufacturing method differs from the first manufacturing methodillustrated in FIG. 9 in that irradiation with the proton H⁺ 11 (seeFIG. 9(c)) is performed after the emitter electrode 24 and theprotective film are formed and the grinding and wet etching 30 isperformed on the rear surface of the FZ wafer 10. The secondmanufacturing method illustrated in FIG. 10 is effective when theheat-resistance temperature of the emitter electrode 24 and theprotective film of the edge termination structure portion is higher thana heat treatment temperature after the irradiation with the proton H⁺.

Specifically, a process from the preparation of the FZ wafer 10 to theformation of a MOS gate, which is an element surface structure, and theedge termination structure portion is the same as that illustrated inFIGS. 9(a) and 9(b). Then, the emitter electrode 24 and a protectivefilm (not illustrated) made of, for example, polyimide are formed (FIG.10(b)). Then, grinding and wet etching 30 is performed on the rearsurface of the FZ wafer 10 to reduce the thickness of the FZ wafer 10 toa desired value (FIG. 10(c)). Then, the rear surface of the wafer isirradiated with the proton H⁺ 11 (FIG. 10(d)) and a heat treatment isperformed (FIG. 10(e)). During the irradiation with the proton H⁺, therange of the proton H⁺ 11 is adjusted in the range of the upper limit ofthe acceleration voltage by an irradiation accelerator. For example,when the range of the proton H⁺ from the rear surface is set to 30 μm inan electrostatic accelerator, acceleration energy is 1.5 MeV.Alternatively, a cyclotron accelerator may be used and the range may beadjusted by an aluminum absorber. The process after FIG. 10(f) is thesame as that after FIG. 9(g) in the first manufacturing method. When theIGBT is formed by the second manufacturing method, it is possible toreduce the number of processes after the thickness of the FZ wafer 10 isreduced and thus reduce a defect, such as the breaking of the wafer dueto the handling of a thin wafer.

Next, a first modification (hereinafter, referred to as a thirdmanufacturing method) of the first manufacturing method illustrated inFIG. 9 will be described with reference to FIGS. 11(a) to 11(i). Thethird manufacturing method differs from the first manufacturing methodillustrated in FIG. 9 in that the grinding and wet etching 30 of therear surface (FIG. 9(f)) and the process of forming the emitterelectrode 24 (FIG. 9(e)) are reversed in FIG. 9 (see FIGS. 11(e) and11(f)). The other processes are the same as those in the firstmanufacturing method illustrated in FIG. 9. When the heat treatmenttemperature after irradiation with the proton H⁺ 11 is higher than theheat-resistant temperature of the emitter electrode 24, the IGBTaccording to the third embodiment may be manufactured by the thirdmanufacturing method illustrated in FIG. 11.

Next, a modification (hereinafter, referred to as a fourth manufacturingmethod) of the second manufacturing method illustrated in FIG. 10 willbe described with reference to FIGS. 12(a) to 12(g). The fourthmanufacturing method differs from the second manufacturing methodillustrated in FIG. 10 in that the process of introducing the n fieldstop layer adjacent to the p collector layer 28 illustrated in FIG.10(f) (the introduction of phosphorus or proton H⁺ into the wafer) isnot performed and an IGBT with a structure in which the expansion of thedepletion layer is stopped by the broad buffer region 26 such that thedepletion layer does not reach the p collector layer. In this way, it ispossible to improve the injection efficiency of holes only by adjustingthe concentration and introduction depth of the p collector layer 28 onthe rear surface of the wafer. The other processes are the same as thosein the second manufacturing method illustrated in FIG. 10.

In the third embodiment, the IGBT with a trench gate structure has beendescribed. However, the invention may be applied to an IGBT with aplanar gate structure.

As described above, according to the third embodiment, in the IGBT, itis possible to obtain the same effect as that of the first embodiment.

Fourth Embodiment

FIG. 13 is a diagram illustrating the structure of a semiconductordevice and a net doping concentration distribution according to a fourthembodiment. A plurality of broad buffer regions 26 according to thethird embodiment may be provided in the n⁻ drift layer 21.

In the fourth embodiment, as illustrated in FIG. 13, a plurality ofbroad buffer regions 26 (three broad buffer regions in FIG. 13) areformed. As such, when a plurality of broad buffer regions 26 areprovided, it is possible to finely control the expansion of a spacecharge region during switching. In the structure in which a plurality ofbroad buffer regions are formed, when the rated voltage V₀ is 1200 V, itis preferable that bulk resistivity be equal to or more than 144 Ωcm,which is the same as that in the first embodiment. In addition, when aplurality of broad buffer regions 26 are formed, it is easy to form thebroad buffer regions with high impurity concentration according to thenumber of broad buffer regions, as compared to the structure in whichone broad buffer region is formed. Therefore, a reduction in theelectric field intensity of a space charge region is likely to be largeduring switching or when a power supply voltage is maintained, ascompared to the structure in which one broad buffer region is formed. Asa result, the breakdown voltage of the semiconductor device is reduced.Therefore, the bulk resistivity may be further increased and it ispreferable that the bulk resistivity be equal to or more than 0.15V₀.The upper limit of the bulk resistivity is 0.25V₀, which is the same asdescribed above. The other structures are the same as those of the thirdembodiment.

The sum of the effective doses of the plurality of broad buffer regions26 may be equal to or more than 4.8×10¹¹ atoms/cm² and equal to or lessthan 1.0×10¹² atoms/cm², as illustrated in the first embodiment. In thefourth embodiment, when three broad buffer regions 26 have peakconcentrations and half widths illustrated in FIG. 13, the first broadbuffer region closest to an emitter electrode 24 has a peakconcentration of 4×10¹⁴ atoms/cm³ and a half width of 10 μm, the secondbroad buffer region has a peak concentration of 1.5×10¹⁵ atoms/cm³ and ahalf width of 5 μm, and the third broad buffer region furthest from theemitter electrode 24 has a peak concentration of 3.5×10¹⁵ atoms/cm³ anda half width of 3 μm. The integrated concentrations of the broad bufferregions 26 are 2×10¹¹ atoms/cm², 3×10¹¹ atoms/cm², and 4×10¹¹ atoms/cm²in increasing order of the distance from the emitter electrode 24, andthe sum of the integrated concentrations is 8×10¹¹ atoms/cm². Inaddition, the peak concentration of the n field stop layer 23 issubstantially 1.0×10¹² atoms/cm² and the sum of the effective doses(integrated concentrations) of n-type layers (the n⁻ drift layer 21, thebroad buffer regions 26, and an n field stop layer 23) is 1.8×10¹²atoms/cm².

The IGBT needs to be designed such that a snapback phenomenon (negativeresistance phenomenon in which a large voltage drop occurs between thecollector and emitter electrodes once without conductivity modulationdue to a very small amount of current and the voltage drop is rapidlyreduced due to conductivity modulation, which results in the flow ofcurrent) does not occur in an IV output waveform when the gate is turnedon. Therefore, the sum of the integrated concentrations of the threen-type layer may not exceed 2.0×10¹² atoms/cm². The depletion layer inan off state should not reach a p collector layer 28. Therefore, the sumof the integrated concentrations of the three n-type layer needs to bemore than 1.2×10¹² atoms/cm². For that reason, the sum of the integratedconcentrations of the three n-type layer may be equal to or more than1.2×10¹² atoms/cm² and equal to or less than 2.0×10¹² atoms/cm². Inaddition, the range of the integrated concentration may be satisfiedonly the n field stop layer 23 which comes into contact with the pcollector layer 28. In this case, phosphorus may be introduced to formthe n field stop layer 23 or protons H⁺ may be introduced to form the nfield stop layer 23. When the range of the integrated concentration issatisfied in all of the three n-type layers; holes, which are minoritycarriers, are smoothly injected from the p collector layer when the gateis turned on, and the breakdown voltage can be stability obtained.

In the case of the IGBT, the operation and effect of the structure inwhich a plurality of broad buffer regions are provided are basically thesame as those of the diode according to the second embodiment. That is,when the variation rate of the donor concentration of an FZ bulk waferis ±α (α>0), the rate of the total length of a bulk portion other thanthe broad buffer region is γ, and the ratio of electric field intensityΔE which is reduced n times in the broad buffer regions with respect toa critical electric field intensity E_(C) is η, a plurality of broadbuffer regions are preferably formed so as to satisfy the condition of4α(γ/η)/{(2−α) (2+α)}<α. As described in the third embodiment, in theIGBT, in order to form the p collector layer 28 on the rear surface,minority carriers are injected into the rear surface. Therefore, it ispreferable that a charge neutral region which is not depleted be ensuredin the range of 5 μm to 20 μm from the rear surface. It is preferablethat the peak of the net doping concentration distribution of the broadbuffer regions 26 be provided so as to lean to a collector electrode 25from the depth of the center of the n⁻ drift layer 21 to reliablyprevent a depletion layer, thereby ensuring the above-mentioned chargeneural region. That is, when a plurality of broad buffer regions 26 areformed so as to lean to the collector electrode from the center of thedrift layer, a “reduction” ΔE (see FIG. 14(c)) in electric fieldintensity can occur in the same region, which is preferable.Specifically, the number of broad buffer regions close to the collectorelectrode from the middle position of the drift layer may be more thanthe number of broad buffer regions (including zero) close to the emitterelectrode from the middle position.

In the fourth embodiment, when a plurality of broad buffer regions 26are formed, it is preferable to irradiate the rear surface (the side onwhich the p collector layer 28 is formed) of the FZ wafer 10 with theproton H. The reason is that, when the front surface of the wafer isirradiated, a crystal defect occurs in the interface between the gateoxide film and silicon and is likely to affect the voltagecharacteristics of the gate. In addition, when a trapping level remainsin the vicinity of the p base layer 22, a carrier distribution ischanged in an on state and the trade-off characteristics between anon-state voltage and turn-off loss are likely to deteriorate.

As described above, according to the fourth embodiment, it is possibleto obtain the same effect as that of the first to third embodiments.

The n-type field stop layer has been described in the IGBTs according tothe third and fourth embodiments. However, the n-type field stop layercan be applied to the diodes according to the first and secondembodiments. That is, the n field stop layer may be formed between an n+cathode layer 3 and the n⁻ drift layer 1 by the injection of phosphorusor irradiation with the proton H⁺ such that it has an impurityconcentration less than that of the n+ cathode layer 3 and is adjacentto the n+ cathode layer 3.

As described above, according to the invention, it is possible toachieve a diode or an IGBT which has a small breakdown voltage variationwidth, a turn-off loss significantly less than that of the productaccording to the related art, and soft switching characteristics with anaccurate control process. Therefore, it is possible to provide an IGBTmodule or an Intelligent Power Module (IPM) which has low electric lossand considers an environmental problem. In addition, in a powerconversion device, such as a PWM inverter using an IGBT module with theabove-mentioned characteristics, it is possible to prevent theoccurrence of overvoltage breakdown or EMI and reduce calorific loss.For example, there are the following power conversion devices. Aconverter-inverter circuit can control, for example, an induction motoror a servo motor with high efficiency and is widely used in the industryor electronic railroad. A power factor improvement circuit (PFC circuit)controls an AC input current in a sine wave shape to improve thewaveform and is used in a switching power supply. In addition, when ap-type isolation layer is formed in the cross section of the IGBT chipaccording to the invention to form a reverse blocking IGBT, the reverseblocking IGBT can be used in a matrix converter. Since the matrixconverter does not require a DC link capacitor, it can be used inapparatuses requiring a small conversion device, such as elevators. Whenthe invention is applied to the reverse blocking IGBT, the n field stoplayer is configured to have an impurity concentration less than theconcentration (for example, 2×10¹⁶ atoms/cm³) in the third embodiment orit is skipped, and the concentration of one or a plurality of broadbuffer regions are adjusted such that the depletion layer in a forwardblocking state does not reach the p collector layer. According to thisstructure, when the depletion layer is expanded from the pn junctionbetween the p collector layer and the drift layer in a reverse blockingstate, it is possible to prevent the concentration of the electric fieldintensity of the pn junction and maintain both the reverse breakdownvoltage and the forward breakdown voltage in the same order.

INDUSTRIAL APPLICABILITY

As described above, the semiconductor device and the method ofmanufacturing the semiconductor device according to the invention areuseful for a power semiconductor device used in, for example, a powerconversion device, such as a converter or an inverter.

EXPLANATIONS OF LETTERS OR NUMERALS

-   -   1, 21 n⁻ DRIFT LAYER    -   2 p ANODE LAYER    -   3 n⁺ CATHODE LAYER    -   4 ANODE ELECTRODE    -   5 CATHODE ELECTRODE    -   6, 26 BROAD BUFFER REGION    -   10 FZ WAFER    -   11 PROTON H⁺    -   12 INSULATING FILM    -   13 CRYSTAL DEFECT    -   14 BORON⁺    -   15 PHOSPHORUS⁺    -   22 P BASE LAYER    -   23 n FIELD STOP LAYER    -   24 EMITTER ELECTRODE    -   25 COLLECTOR ELECTRODE    -   27 GATE ELECTRODE    -   28 p COLLECTOR LAYER    -   29 n EMITTER LAYER    -   30 GRINDING AND WET ETCHING    -   31 GATE INSULATING FILM    -   32 INTERLAYER INSULATING FILM

1-15. (canceled)
 16. A semiconductor device comprising: a drift layer of a first-conductivity-type; an anode layer of a second-conductivity-type that is provided on a first main surface of the drift layer and has an impurity concentration more than that of the drift layer; a cathode layer of the first-conductivity-type that is provided on a second main surface of the drift layer and has an impurity concentration more than that of the drift layer; and a plurality of broad buffer layers of the first conductivity-type that are provided in the drift layer and each of the plurality of the broad buffer layers has an impurity concentration more than that of a portion of the drift layer excluding the plurality of broad buffer layers, and has a mountain-shaped impurity concentration distribution in which a local maximum value is less than the impurity concentration of the anode layer and the cathode layer, the mountain-shaped impurity concentration distribution having a peak at the local maximum value and differences of elevation in a depth direction, wherein a donor concentration at a first portion of the drift layer disposed between the cathode layer and a first broad buffer layer that is a broad buffer layer among the plurality of broad buffer layers closest to the cathode layer is higher than a lowest donor concentration of a second portion of the drift layer disposed between the first broad buffer layer and a second broad buffer layer among the plurality of broad buffer layers, the second broad buffer layer being a broad buffer layer among the plurality of broad buffer layers that is disposed nearest to the first broad buffer layer on an anode layer side of the first broad buffer layer, wherein the first broad buffer layer, which is the broad buffer layer among the plurality of broad buffer layers that is closest to the cathode layer, includes either a hydrogen-related donor or phosphorus as a donor, and wherein broad buffer layers of the plurality of broad buffer layers other than the first broad buffer layer include hydrogen-related donors.
 17. The semiconductor device of claim 16, wherein the plurality of broad buffer layers are disposed at different depths from the first main surface, respectively, and the number of broad buffer layers close to the second main surface from an intermediate position of the drift layer is more than the number of broad buffer layers close to the first main surface from the intermediate position of the drift layer.
 18. The semiconductor device of claim 16, wherein the number of broad buffer layers close to the first main surface from an intermediate position of the drift layer is at least one, and wherein the number of broad buffer layers close to the second main surface from the intermediate position of the drift layer is at least one.
 19. The semiconductor device of claim 16, wherein the number of broad buffer layers is at least three.
 20. The semiconductor device of claim 16, wherein a resistivity ρ0 (Ωcm) of the drift layer satisfies 0.12V0≤ρ0 with respect to a rated voltage V0 (V).
 21. The semiconductor device of claim 16, wherein an oxygen concentration from a surface of the anode layer to a peak concentration of a broad buffer layer of the plurality of broad buffer layers is equal to or more than 1×10¹⁶ atoms/cm³ and equal to or less than 1×10¹⁸ atoms/cm³.
 22. A semiconductor device comprising: a drift layer of a first conductivity-type; a base layer of a second conductivity-type that is provided on a first main surface of the drift layer and has an impurity concentration more than that of the drift layer; an emitter layer of the first-conductivity-type that is provided on the first main surface of the drift layer in contact with the base layer and has an impurity concentration more than that of the base layer; an insulation layer that is provided in contact with the drift layer, the base layer and the emitter layer; a gate electrode, the insulation layer being disposed between the gate electrode and the drift layer, the base layer, and the emitter layer; a collector layer of the second conductivity-type that is provided on a second main surface of the drift layer and has an impurity concentration more than that of the drift layer; and a plurality of broad buffer layers of the first conductivity-type that are provided in the drift layer and each of the plurality of the broad buffer layers has an impurity concentration more than that of a portion of the drift layer excluding the plurality of broad buffer layers, and has a mountain-shaped impurity concentration distribution in which a local maximum value is less than the impurity concentration of the base layer and the collector layer, the mountain-shaped impurity concentration distribution having a peak at the local maximum value and differences of elevation in a depth direction, wherein a donor concentration at a first portion of the drift layer disposed between the collector layer and a first broad buffer layer a broad buffer layer among the plurality of broad buffer layers closest to the collector layer is higher than a lowest donor concentration of a second portion of the drift layer disposed between the first buffer layer and a second broad buffer layer among the plurality of broad buffer layers, the second broad buffer layer being a broad buffer layer among the plurality of broad buffer layers that is disposed nearest to the first broad buffer layer on a base layer side of the first broad buffer layer, wherein the first broad buffer layer, which is the broad buffer layer among the plurality of broad buffer layers that is closest to the collector layer, includes either a hydrogen-related donor or phosphorus as a donor, and wherein broad buffer layers of the plurality of broad buffer layers other than the first broad buffer layer include hydrogen-related donors.
 23. The semiconductor device of claim 22, wherein the plurality of broad buffer layers are disposed at different depths from the first main surface, respectively, and the number of broad buffer layers close to the second main surface from an intermediate position of the drift layer is more than the number of broad buffer layers close to the first main surface from the intermediate position of the drift layer.
 24. The semiconductor device of claim 22, wherein the number of broad buffer layers close to the first main surface from an intermediate position of the drift layer is at least one, and wherein the number of broad buffer layers close to the second main surface from the intermediate position of the drift layer is at least one.
 25. The semiconductor device of claim 22, wherein the number of broad buffer layers is at least three.
 26. The semiconductor device of claim 22, wherein a resistivity ρ0 (Ωcm) of the drift layer satisfies 0.12V0≤ρ0 with respect to a rated voltage V0 (V).
 27. The semiconductor device of claim 22, wherein an oxygen concentration from a surface of the base layer to a peak concentration of a broad buffer layer of the plurality of broad buffer layers is equal to or more than 1×10¹⁶ atoms/cm³ and equal to or less than 1×10¹⁸ atoms/cm³. 